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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2122 DESCRIPTION *With TO-3 package *Short switching times. *High dielectric strength. APPLICATIONS *For use in TV horizontal deflection stage PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 325 7 10 50 175 -55~175 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC2122 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0; 325 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=8A;IB=2.5 A 3.3 V VBEsat Base-emitter saturation voltage IC=8A;IB=2.5 A 2.2 V ICBO Collector cut-off current VCB=800V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V;IC=0 1.0 mA hFE DC current gain IC=2.5A ; VCE=10V 15 fT Transition frequency IC=0.1A ; VCE=10V 6 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2122 Fig.2 Outline dimensions 3 |
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